View UT611024JC_224967.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

UTRON
Rev. 1.6
UT611024
128K X 8 BIT HIGH SPEED CMOS SRAM
REVISION HISTORY
REVISION REV. 1.0 REV. 1.1 REV. 1.2 REV 1.4 DESCRIPTION Original. Add Data Retention Section NA 1. The symbols CE1#,OE# and WE# are revised as CE1 , OE and WE 2. Delete data retention section. Add note in DC ELECTRICAL CHARACTERISTICS setion: VIL=-3.0V for pulse width less than 10ns. 1.Add order information for lead free product 2.Revised timing read/write waveform DATE Jan. 14,2000 Nov. 01,2000 Jun. 18,2001
REV 1.5 REV 1.6
Oct. 30,2001 May. 22,2003
UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919
P80048
1
UTRON
Rev. 1.6
UT611024
128K X 8 BIT HIGH SPEED CMOS SRAM GENERAL DESCRIPTION
The UT611024 is a 1,048,576-bit high speed CMOS static random access memory organized as 131,072 words by 8 bits. It is fabricated using high performance, high reliability CMOS technology. The UT611024 is designed for high-speed system application. It is particularly suited for use in high speed and high density system applications. The UT611024 operates from a signal 5V power supply and all inputs and outputs are fully TTL compatible
FEATURES
Fast access time : 10/12/15ns (max.) Low operating power consumption: 100 mA (typical.) Single5V power supply All inputs and outputs are TTL compatible Fully static operation Three state outputs Package : 32-pin 300 mil skinny PDIP 32-pin 300 mil SOJ 32-pin 8mmx20mm TSOP-1 32-pin 8mmx13.4mm STSOP
FUNCTIONAL BLOCK DIAGRAM
2048 X 512 MEMORY ARRAY
PIN CONFIGURATION
A0-A16 DECODER
NC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 Vcc A15 CE2
WE
Vcc Vss
A16 A14 A12 A7 A6
A13 A8 A9 A11
OE
UT611024
I/O1-I/O8
I/O DATA CIRCUIT
COLUMN I/O
A5 A4 A3 A2 A1 A0 I/O1
A10
CE
I/O8 I/O7 I/O6 I/O5 I/O4
CE CE2 OE
WE
I/O2
CONTROL CIRCUIT
I/O3 Vss
PDIP / SOJ
PIN DESCRIPTION
A11 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26
SYMBOL A0 - A16 I/O1 - I/O8 CE ,CE2
WE OE VCC VSS NC
DESCRIPTION Address Inputs Data Inputs/Outputs Chip Enable Inputs Write Enable Input Output Enable Input Power Supply Ground No Connection
OE
A10
CE
A9 A8 A13
I/O8 I/O7 I/O6 I/O5 I/O4 Vss I/O3 I/O2 I/O1 A0 A1 A2 A3
WE
CE2 A15 Vcc NC A16 A14 A12 A7 A6 A5 A4
UT611024
25 24 23 22 21 20 19 18 17
STSOP / TSOP-1
UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919
P80048
2
UTRON
Rev. 1.6
UT611024
128K X 8 BIT HIGH SPEED CMOS SRAM
ABSOLUTE MAXIMUM RATINGS*
PARAMETER Terminal Voltage with Respect to VSS Operating Temperature Storage Temperature Power Dissipation DC Output Current Soldering Temperature (under 10 sec) SYMBOL VTERM TA TSTG PD IOUT Tsolder RATING -0.5 to + 7.0 0 to +70 -65 to +150 1 50 260 UNIT V J J W mA J
*Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.
TRUTH TABLE
MODE Standby Standby Output Disable Read Write
Note:
CE H X L L L
CE2 X L H H H
OE X X H L X
WE X X H H L
I/O OPERATION SUPPLY CURRENT High - Z ISB, ISB1 High - Z ISB, ISB1 High - Z ICC DOUT ICC DIN ICC
H = VIH, L=VIL, X = Don't care.
DC ELECTRICAL CHARACTERISTICS (VCC = 5V10%, TA = 0J
PARAMETER Input High Voltage Input Low Voltage Input Leakage Current Output Leakage Current Output High Voltage Output Low Voltage Operating Power Supply Current Standby Power Supply Current SYMBOL TEST CONDITION VIH * VIL ILI VSS O VIN O VCC ILO VSS O VI/O O VCC, CE =VIH or CE2=VIL or OE =VIH or WE = VIL VOH IOH= - 4mA VOL IOL= 8mA ICC Cycle time =Min., II/O = 0mA , - 10 - 12 CE = VIL ,CE2= VIH - 15 ISB CE =VIH or CE2=VIL ISB1 VIH or VINO VIL CE U VCC-0.2V or CE2O 0.2V VINU VCC-0.2V or VIN O 0.2V VINU
to 70J )
MIN. 2.2 -0.5 -1 -1 2.4 MAX. UNIT VCC+0.5 V 0.8 V 1 A 1 A 0.4 180 160 140 30 5 V V mA mA mA mA mA
Notes: 1. Overshoot : Vcc+2.0v for pulse width less than 8ns. 2. Undershoot : Vss-2.0v for pulse width less than 8ns. 3. Overshoot and Undershoot are sampled, not 100% tested.
UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919
P80048
3
UTRON
Rev. 1.6
UT611024
128K X 8 BIT HIGH SPEED CMOS SRAM
CAPACITANCE (TA=25J , f=1.0MHz)
PARAMETER Input Capacitance Input/Output Capacitance SYMBOL CIN CI/O MIN.
-
MAX 8 10
UNIT pF pF
Note : These parameters are guaranteed by device characterization, but not production tested.
AC TEST CONDITIONS
Input Pulse Levels Input Rise and Fall Times Input and Output Timing Reference Levels Output Load 0V to 3.0V 3ns 1.5V CL = 30pF, IOH/IOL = -1mA/4mA
AC ELECTRICAL CHARACTERISTICS (VCC = 5V10%, TA = 0J to 70J )
(1) READ CYCLE PARAMETER Read Cycle Time Address Access Time Chip Enable Access Time Output Enable Access Time Chip Enable to Output in Low Z Output Enable to Output in Low Z Chip Disable to Output in High Z Output Disable to Output in High Z Output Hold from Address Change (2) WRITE CYCLE PARAMETER Write Cycle Time Address Valid to End of Write Chip Enable to End of Write Address Set-up Time Write Pulse Width Write Recovery Time Data to Write Time Overlap Data Hold from End of Write Time Output Active from End of Write Write to Output in High Z
SYMBOL UT611024-10 MIN. MAX. UT611024-12 MIN. MAX. UT611024-15 MIN. MAX. UNIT
tRC tAA tACE1, tACE2 tOE tCLZ1*, tCLZ2* tOLZ* tCHZ*1,tCHZ*2 tOHZ* tOH
10 2 0 3
10 10 5 5 5 -
12 3 0 3
12 12 6 6 6 -
15 4 0 3
15 15 7 7 7 -
ns ns ns ns ns ns ns ns ns
SYMBOL UT611024-10 MIN. MAX.
UT611024-12 MIN. MAX.
UT611024-15 MIN. MAX.
UNIT
tWC tAW tCW1, tCW2 tAS tWP tWR tDW tDH tOW* tWHZ*
10 8 8 0 8 0 6 0 2 -
6
12 10 10 0 9 0 7 0 3 -
7
15 12 12 0 10 0 8 0 4 -
8
ns ns ns ns ns ns ns ns ns ns
*These parameters are guaranteed by device characterization, but not production tested.
UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919
P80048
4
UTRON
Rev. 1.6
UT611024
128K X 8 BIT HIGH SPEED CMOS SRAM
TIMING WAVEFORMS
READ CYCLE 1 (Address Controlled)
(1,2)
tRC
Address
tAA tOH
Dout Previous data valid Data Valid
tOH
READ CYCLE 2 ( CE and CE2 and OE Controlled) (1,3,4,5)
tRC
Address
tAA
CE
tACE
CE2
OE
tOE tCLZ tOLZ
Dout High-Z Data Valid
tCHZ tOHZ tOH
High-Z
Notes : 1. WE is high for read cycle. 2.Device is continuously selected OE =low, CE =low, CE2=high. 3.Address must be valid prior to or coincident with CE =low, CE2=high; otherwise tAA is the limiting parameter. 4.tCLZ, tOLZ, tCHZ and tOHZ are specified with CL=5pF. Transition is measuredO 500mV from steady state. 5.At any given temperature and voltage condition, tCHZ is less than tCLZ , tOHZ is less than tOLZ.
UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919
P80048
5
UTRON
Rev. 1.6 WRITE CYCLE 1 ( WE Controlled) (1,2,3,5,6)
tW C
A d d re s s
UT611024
128K X 8 BIT HIGH SPEED CMOS SRAM
tA W
CE
tC W
CE2
tA S
WE
tW P
tW R
tW H Z
D out (4 )
H ig h -Z
tO W
(4 )
tD W
D in
tD H
D a ta V a lid
WRITE CYCLE 2 ( CE and CE2 Controlled) (1,2,5,6)
tW C
A d d re s s
tA W
CE
tA S tC W
tW R
CE2
tW P
WE
tW H Z
Dout (4 ) H ig h -Z
tD W
D in D a ta V a lid
tD H
Notes : 1. WE , CE must be high or CE2 must be low during all address transitions. 2.A write occurs during the overlap of a low CE , high CE2, low WE . 3. During a WE controlled write cycle with OE low, tWP must be greater than tWHZ+tDW to allow the drivers to turn off and data to be placed on the bus. 4.During this period, I/O pins are in the output state, and input signals must not be applied. 5. If the CE low transition and CE2 high transition occurs simultaneously with or after WE low transition, the outputs remain in a high impedance state. 6.tOW and tWHZ are specified with CL = 5pF. Transition is measured O 500mV from steady state.
UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919
P80048
6
UTRON
Rev. 1.6
UT611024
128K X 8 BIT HIGH SPEED CMOS SRAM
PACKAGE OUTLINE DIMENSION
32 pin PDIP 300mil Package Outline Dimension
UNIT
INCH(BASE)
SYMBOL
MM(REF) 3.302 O 0.127 0.381 (MIN) 0.457 O 0.102 1.270 O 0.203 0.254 O 0.102 40.640 O 0.127 8.001 O 0.254 7.315 O 0.102 2.540 TYP 8.890 O 0.508 3.175 (MIN) 1.524 O 0.127 o o 0 a 10
A A1 B B1 c D E E1 e1 Eb L Q1 1c
0.130 O 0.005 0.015(MIN) 0.018 O 0.004 0.050 O 0.008 0.010 O 0.004 1.600 O 0.005 0.315 O 0.010 0.288 O 0.004 0.100 TYP 0.350 O 0.020 0.125 (MIN) 0.060 O 0.005 o o 0 a 10
NoteG 1. All EDGE WITH MATTE FINISH. 2. DIMENSION D AND E1 DO NOT INCLUDE MOLD FLASH OR PROTRUSION.
UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919
P80048
7
UTRON
Rev. 1.6 32 pin SOJ Package Outline Dimension
UT611024
128K X 8 BIT HIGH SPEED CMOS SRAM
UNIT
SYMBOL
A A1 A2 B B1 C D E E1 e L y
INCH(REF) 0.148 (MAX) 0.026 (MIN) 0.100 O 0.005 0.018 O 0.003 0.028 O 0.003 0.010 O 0.003 0.830 (MAX) 0.335 O 0.010 0.300 O 0.005 0.050 O 0.003 0.086 O 0.010 0.003 (MAX)
MM(BASE) 3.759 (MAX) 0.660 (MIN) 2.540 O 0.127 0.457 O 0.076 0.711 O 0.076 0.254 O 0.076 21.082 (MAX) 8.509 O 0.254 7.620 O 0.127 1.270 O 0.076 2.184 O 0.254 0.076 (MAX)
UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919
P80048
8
UTRON
Rev. 1.6 32pin TSOP-I Package Outline Dimension
HD
UT611024
128K X 8 BIT HIGH SPEED CMOS SRAM
C L
1
32
e
16 17
b
E
"A"
Seating Plane
y
D
16
17
A
A2
GAUGE PLANE
A1
SEATING PLANE
1
32
"A" DETAIL VIEW
L1
UNIT
SYMBOL
A A1 A2 b c D E e HD L L1 y K
INCH(BASE) 0.047 (MAX) 0.004 O 0.002 0.039 O 0.002 0.008 + 0.002 - 0.001 0.005 (TYP) 0.724 O 0.004 0.315 O 0.004 0.020 (TYP) 0.787 O 0.008 0.0197 O 0.004 0.0315 O 0.004 0.003 (MAX) o o 0 a 5
MM(REF) 1.20 (MAX) 0.10 O 0.05 1.00 O 0.05 0.20 + 0.05 -0.03 0.127 (TYP) 18.40 O 0.10 8.00 O 0.10 0.50 (TYP) 20.00 O 0.20 0.50 O 0.10 0.08 O 0.10 0.076 (MAX) o o 0 a 5
UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919
P80048
9
0.254
0
UTRON
Rev. 1.6 32pin 8mm x 13.4mm STSOP Package Outline Dimension
HD
UT611024
128K X 8 BIT HIGH SPEED CMOS SRAM
c L
1 32
e 16 17
"A"
D Seating Plane
b
E
y
16
17
GAUGE PLANE A A2 0.254 0 A1 SEATING PLANE L1
"A" DATAIL VIEW
1 32
UNIT SYMBOL A A1 A2 b D E e HD L1 y K
INCH(BASE) 0.047 (MAX) 0.004 O 0.002 0.039 O 0.002 0.008 O 0.001 0.465 O 0.004 0.315 O 0.004 0.020 (TYP) 0.528 O 0.008 0.0315 O 0.004 0.003 (MAX) o o 0 a 5
MM(REF) 1.20 (MAX) 0.10 O 0.05 1.00 O 0.05 0.200 O 0.025 11.800 O 0.100 8.000 O 0.100 0.50 (TYP) 13.40 O 0.20. 0.80 O 0.10 0.076 (MAX) o o 0 a 5
UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919
P80048
10
UTRON
Rev. 1.6
UT611024
128K X 8 BIT HIGH SPEED CMOS SRAM
ORDERING INFORMATION
PART NO. UT611024KC-12 UT611024KC-15 UT611024JC-10 UT611024JC-12 UT611024JC-15 UT611024LC-10 UT611024LC-12 UT611024LC-15 UT611024LS-10 UT611024LS-12 UT611024LS-15 ACCESS TIME (ns) 12 15 10 12 15 10 12 15 10 12 15 PACKAGE 32 PIN SKINNY PDIP 32 PIN SKINNY PDIP 32 PIN SOJ 32 PIN SOJ 32 PIN SOJ 32 PIN TSOP-1 32 PIN TSOP-1 32 PIN TSOP-1 32 PIN STSOP 32 PIN STSOP 32 PIN STSOP
ORDERING INFORMATION (for lead free product)
PART NO. UT611024KCL-12 UT611024KCL-15 UT611024JCL-10 UT611024JCL-12 UT611024JCL-15 UT611024LCL-10 UT611024LCL-12 UT611024LCL-15 UT611024LSL-10 UT611024LSL-12 UT611024LSL-15 ACCESS TIME (ns) 12 15 10 12 15 10 12 15 10 12 15 PACKAGE 32 PIN SKINNY PDIP 32 PIN SKINNY PDIP 32 PIN SOJ 32 PIN SOJ 32 PIN SOJ 32 PIN TSOP-1 32 PIN TSOP-1 32 PIN TSOP-1 32 PIN STSOP 32 PIN STSOP 32 PIN STSOP
UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919
P80048
11
UTRON
Rev. 1.6
UT611024
128K X 8 BIT HIGH SPEED CMOS SRAM
THIS PAGE IS LEFT BLANK INTENTIONALLY.
UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919
P80048
12

▲Up To Search▲

Price & Availability of UT611024JC

	To Download UT611024JC Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .